AS6C8008-55BINTR

Overview

The AS6C8008-55BINTR is an asynchronous static random-access memory (SRAM) device manufactured by Alliance Memory. It provides a total storage capacity of 8 Mbit, organized as 1M words by 8 bits. The component features a maximum random access time of 55 ns and operates within a supply voltage range of 2.7 V to 5.5 V. It utilizes a parallel interface with a 20-bit address bus. The device is housed in a 44-pin Thin Fine-pitch Ball Grid Array (TFBGA) package designed for surface-mount technology. It supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

• Asynchronous operation with high-speed data access capabilities
• Wide single-supply voltage compatibility for flexible system integration
• Industrial-grade thermal stability for demanding environments
• Compact surface-mount packaging for space-constrained designs

Applications

• Industrial control systems requiring reliable non-volatile-like temporary storage
• Embedded computing platforms needing fast local data buffering
• Telecommunications equipment utilizing asynchronous memory interfaces
• Automotive electronics operating within specified temperature ranges

Procurement Notes

Verify the exact suffix BINTR against official manufacturer documentation to confirm the specific tape-and-reel packaging configuration and die revision. Ensure the selected variant matches the required TFBGA pinout and thermal specifications for your application. Cross-reference the part number with current datasheets to confirm active status and availability constraints before finalizing procurement plans.

Selection Notes

Select this component when an 8 Mbit asynchronous SRAM with 55 ns access speed is required in a compact BGA form factor. Consider the 2.7 V to 5.5 V operating range for compatibility with standard logic levels. Evaluate the TFBGA-44 package for suitable PCB real estate and thermal management requirements compared to TSOP or DIP alternatives within the same memory family.

Part Context

This part belongs to the AS6C8008 series of low-power asynchronous SRAMs from Alliance Memory. The series offers various access speeds and package options to suit different design needs. The AS6C8008-55BINTR specifically targets applications requiring robust performance in industrial conditions while maintaining a small footprint through its ball grid array construction.

Replacement Considerations

Check for AS6C8008-55ZIN for TSOP II package equivalents. Verify AS6C8008A-45ZIN for faster 45 ns access times in similar packages. Confirm pin compatibility and electrical characteristics before substituting any alternative part numbers.