SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AS6C8008-55ZINTR is an asynchronous static random-access memory (SRAM) device manufactured by Alliance Memory. It provides a total storage capacity of 8 Mbit, organized as 1M words by 8 bits. The component features a maximum access time of 55 ns and operates within a supply voltage range of 2.7 V to 5.5 V. It utilizes a 44-pin TSOP II surface-mount package with a width of 10.16 mm and a height of 1 mm. The device supports an industrial operating temperature range from -40°C to +85°C.
Verify the specific suffix ZIN against official datasheets to confirm the TSOP II package type and lead-free status. Ensure the 55 ns speed grade matches system timing requirements. Confirm availability through authorized distributors as stock levels fluctuate. Check for RoHS compliance documentation if required by regional regulations.
Select this part when 8 Mbit capacity and 55 ns latency are required in a compact 44-pin surface-mount form factor. Compare against the AS6C8008B series for lower power options or faster speeds if the application demands. Ensure voltage compatibility with the host system's 2.7V to 5.5V rail. Consider thermal management for industrial environments exceeding standard commercial limits.
This component belongs to the AS6C8008 family of high-density asynchronous SRAMs. It serves as a drop-in replacement for legacy 8M-bit SRAM designs using similar pinouts. The device complements smaller capacity variants like the AS6C4008 and larger density options within the manufacturer's portfolio.
The AS6C8008-55BINTR offers a TFBGA package alternative. The AS6C8008A-45ZIN provides a faster 45 ns access time but requires a restricted 3.6V maximum voltage.