AS6C8008A-45BINTR

Description：IC SRAM 8MBIT PARALLEL 48FPBGA
Series：-
Mfr：Alliance Memory, Inc.
Package：Tape & Reel (TR)

SKU:320ee81eb72c Category: Memory IC Brand: Alliance Memory, Inc.

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Product introduction

Product Detailed Parameters

Description：IC SRAM 8MBIT PARALLEL 48FPBGA
Series：-
Mfr：Alliance Memory, Inc.
Package：Tape & Reel (TR)
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Asynchronous
Memory Size：8Mbit
Memory Organization：1M x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：45ns
Voltage - Supply：2.7V ~ 3.6V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：48-VFBGA
Supplier Device Package：48-FPBGA (10x8)
Access Time：45 ns
Grade：-
Qualification：-

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AS6C8008A-45BINTR

Overview

The AS6C8008A-45BINTR is an asynchronous static random-access memory (SRAM) manufactured by Alliance Memory, Inc. It provides a storage capacity of 8 Mbit organized as 1M x 8 bits. The device features a 45 ns access time and operates within a voltage range of 2.7 V to 3.6 V. It utilizes a parallel interface and is housed in a 44-pin TSOP II package. The component supports surface mount installation and is rated for industrial operating temperatures ranging from -40°C to +85°C.

Feature Summary

Asynchronous CMOS SRAM technology with low power consumption
Industrial temperature rating for extended environmental reliability
Single 3V supply operation capability

Applications

Industrial control systems requiring non-volatile-like data retention without battery backup
Embedded applications needing fast random access memory buffers
Consumer electronics utilizing standard parallel memory interfaces

Procurement Notes

Verify the specific suffix BINTR against official datasheets to confirm tape-and-reel packaging and industrial grade designation. Confirm RoHS compliance status through current manufacturer documentation. Check for end-of-life notifications or discontinuance alerts prior to finalizing procurement plans.

Selection Notes

Select this component when a 1M x 8 configuration with 45 ns speed is required in a 44-pin TSOP II form factor. Ensure the design supports 3V logic levels and operates within the specified industrial temperature range. Compare against newer series if lower power or higher density is needed.

Part Context

This part belongs to the AS6C8008A series of low-power CMOS SRAMs. It serves as a high-speed memory solution for embedded systems. The BINTR suffix indicates specific packaging and shipping configurations distinct from tray versions.