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The AS6C8008B-45BIN is a low-power static random-access memory (SRAM) device manufactured by Alliance Memory. It provides an 8 Mbit storage capacity organized as 1M x 8 bits. The component features a parallel interface with a maximum access time of 45 ns. It operates within a voltage range of 2.7 V to 3.6 V and supports surface-mount installation in a 48-ball TFBGA package measuring 6x8 mm. Designed for industrial applications, it functions reliably between -40°C and +85°C.
Verify the specific suffix BIN against official datasheets to confirm the 48-ball TFBGA package and 3.6V maximum voltage limit. Ensure compatibility with 2.7V to 3.6V supply rails. Confirm industrial temperature grade (-40°C to +85°C) matches application requirements. Cross-reference pinout diagrams for the 6x8mm footprint before integration.
Select this part when a high-density 8Mbit SRAM is required in a compact BGA form factor. It is suitable for designs prioritizing low power and wide voltage tolerance over higher speed or larger capacities. Consider the 45ns access time for system timing constraints. Verify that the parallel interface aligns with the host controller's memory bus capabilities.
This component belongs to the AS6C8008B series of low-power asynchronous SRAMs from Alliance Memory. It shares architectural similarities with other devices in the family but differs in package type and specific electrical parameters. The B die revision indicates a specific manufacturing lot or design iteration. It complements smaller capacity variants like the AS6C8008A-45ZIN while offering a more compact mounting solution.
AS6C8008B-45BINTR: Identical electrical specifications with tape-and-reel packaging instead of tray.