AS6C8008B-45BINTR

$5.01

Description：IC SRAM 8MBIT PAR
Series：-
Mfr：Alliance Memory, Inc.
Package：Tape & Reel (TR)

SKU:c293571f5060 Category: Memory IC Brand: Alliance Memory, Inc.

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Product introduction

Product Detailed Parameters

Description：IC SRAM 8MBIT PAR
Series：-
Mfr：Alliance Memory, Inc.
Package：Tape & Reel (TR)
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Single Port, Asynchronous
Memory Size：8Mbit
Memory Organization：1M x 8
Memory Interface：Parallel
Write Cycle Time - Word, Page：45ns
Voltage - Supply：2.7V ~ 3.6V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：48-LFBGA
Supplier Device Package：48-TFBGA (6x8)
Access Time：45 ns
Grade：-
Qualification：-

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AS6C8008B-45BINTR

Overview

The AS6C8008B-45BINTR is a low-power static random-access memory (SRAM) manufactured by Alliance Memory. It provides an 8 Mbit storage capacity organized as 1M x 8 bits. The device features a parallel interface with a maximum access time of 45 ns. It operates within a voltage range of 2.7 V to 3.6 V and supports surface-mount installation in a 44-ball TFBGA package. The component is rated for industrial temperatures, functioning between -40°C and +85°C.

Feature Summary

Low-power CMOS technology designed for reduced energy consumption
Industrial temperature rating for reliable operation in harsh environments
Single power supply operation compatible with standard logic levels

Applications

Industrial control systems requiring non-volatile-like data retention without battery backup
Embedded systems utilizing microcontrollers needing fast local data storage
Automotive electronics operating under strict thermal conditions

Procurement Notes

Verify the specific suffix BINTR confirms tape-and-reel packaging and B-die revision when sourcing. Confirm the 44-ball TFBGA footprint matches your PCB design constraints. Ensure the 2.7V to 3.6V supply rail aligns with your system's power architecture. Check for RoHS compliance documentation if required by your manufacturing standards.

Selection Notes

Select this part when a compact 8 Mbit SRAM solution is needed for space-constrained designs. The TFBGA package offers a smaller footprint compared to traditional TSOP options. Choose this model over higher-speed variants if cost efficiency is prioritized alongside moderate 45 ns performance requirements.

Part Context

This component belongs to the AS6C8008B series of asynchronous SRAMs from Alliance Memory. The series is engineered for applications demanding high-density memory in small packages. The B-die designation indicates a specific silicon revision within this product family line.