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Product Detailed Parameters
- Description：IC SRAM 8MBIT PARALLEL 44TSOP II
- Series：-
- Mfr：Alliance Memory, Inc.
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：8Mbit
- Memory Organization：1M x 8
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：45ns
- Voltage - Supply：2.7V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package：44-TSOP II
- Access Time：45 ns
- Grade：-
- Qualification：-
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Overview
The AS6C8008B-45ZIN is an asynchronous static random-access memory (SRAM) device manufactured by Alliance Memory. It provides a total storage capacity of 8 Mbit, organized as 1 Megaword by 8 bits. The component features a maximum access time of 45 nanoseconds and operates within a voltage range of 2.7 V to 3.6 V. It utilizes a parallel interface and is housed in a 44-pin TSOP II package. The device supports surface mount installation and is rated for industrial operating temperatures ranging from -40°C to +85°C.
Feature Summary
- Asynchronous operation with fast 45 ns access time
- Low power consumption design suitable for battery applications
- Industrial temperature range support for harsh environments
Applications
- Embedded systems requiring non-volatile-like data retention without power
- Industrial control units needing reliable temporary data storage
- Consumer electronics utilizing low-power memory solutions
Procurement Notes
Verify the specific suffix ZIN corresponds to the TSOP-II-44 package and tape-and-reel or tray availability as per current distributor listings. Confirm RoHS compliance status through official datasheets before integration. Ensure supply chain stability checks are performed due to potential lifecycle variations in memory components.
Selection Notes
Select this part when 8 Mbit capacity and 45 ns speed are required within a 44-pin form factor. Compare against AS6C8008A variants for pin compatibility and power differences. Validate voltage tolerance matches the system's 3.3V logic levels. Consider thermal management requirements for industrial grade operation.
Part Context
This component belongs to the AS6C8008 series of low-power SRAMs. It serves as a high-speed buffer memory in digital circuits. The B variant typically denotes specific manufacturing revisions or enhanced performance characteristics compared to earlier A versions. It is designed for general-purpose data storage in microcontroller-based systems.
Replacement Considerations
AS6C8008A-45ZIN offers similar specifications but may differ in power consumption profiles. Verify electrical parameters and pinout compatibility before substitution. No direct cross-manufacturer equivalents are confirmed in public documentation.
