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Product Detailed Parameters
- Description：IC SRAM 8MBIT PAR
- Series：-
- Mfr：Alliance Memory, Inc.
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：8Mbit
- Memory Organization：1M x 8
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：45ns
- Voltage - Supply：2.7V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package：44-TSOP II
- Access Time：45 ns
- Grade：-
- Qualification：-
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Overview
The AS6C8008B-45ZINTR is a low-power asynchronous static random-access memory (SRAM) manufactured by Alliance Memory. It provides an 8 Mbit storage capacity organized as 1M x 8 bits. The device features a 45 ns access time and operates within a voltage range of 2.7 V to 3.6 V. It utilizes a parallel interface and is housed in a 44-pin TSOP II package. The component supports surface mount installation and is rated for industrial operating temperatures ranging from -40°C to +85°C.
Feature Summary
- Low-power CMOS technology designed for reduced energy consumption
- Asynchronous operation with fast 45 ns access speed
- Industrial temperature rating for reliable performance in harsh environments
Applications
- Embedded systems requiring non-volatile-like data retention without power
- Industrial control units operating in extreme temperature conditions
- Consumer electronics utilizing low-voltage logic interfaces
Procurement Notes
Verify the specific suffix ZINTR against official datasheets to confirm tape-and-reel packaging and RoHS compliance status. Ensure the 3.6 V maximum voltage limit aligns with your system's power supply rails, as this variant differs from 5.5 V tolerant models. Confirm availability through authorized distributors, as stock levels fluctuate.
Selection Notes
Select this part when a 1M x 8 organization is required with a 45 ns speed grade. It is suitable for designs constrained by a 3.6 V maximum supply voltage. Compare against the AS6C8008B-45BINTR if a TFBGA package is preferred over the TSOP II form factor. Ensure the application does not require 5.5 V tolerance.
Part Context
This component belongs to the AS6C8008B series of low-power SRAMs. It serves as a high-speed buffer or cache memory in digital circuits. The series offers various package options including TSOP and BGA, catering to different PCB layout constraints while maintaining consistent electrical performance characteristics across the family.
Replacement Considerations
The AS6C8008B-45ZIN is a tray-packaged alternative with identical electrical specifications. Verify pin compatibility and package dimensions before substitution.
