AS6C8008B-55ZIN

Overview

The AS6C8008B-55ZIN is an asynchronous CMOS static random access memory device manufactured by Alliance Memory. It provides a total storage capacity of 8 megabits, organized as 1 megabit by 8 bits. The component features a maximum random access time of 55 nanoseconds, ensuring fast data retrieval for system applications. It operates within a supply voltage range of 2.7 volts to 5.5 volts and supports surface mount installation in a 44-pin Thin Shrink Small Outline Package (TSOP). The device is rated for industrial operating temperatures ranging from -40°C to +85°C.

Feature Summary

• Asynchronous operation with high-speed data access capabilities
• CMOS technology for low power consumption
• Wide supply voltage compatibility for flexible integration

Applications

• Battery backup nonvolatile memory systems
• Industrial control equipment requiring reliable volatile storage
• Embedded systems needing fast local data buffering

Procurement Notes

Verify the specific suffix ZIN against official datasheets to confirm package dimensions and lead finish specifications. Ensure the selected variant matches the required voltage and temperature ratings for the target application environment. Cross-reference ordering information directly with Alliance Memory documentation to avoid discrepancies in pinout or electrical characteristics.

Selection Notes

Select this component when an 8-megabit asynchronous SRAM with 55-nanosecond access speed is required. The wide voltage range allows compatibility with both 3.3-volt and 5-volt logic systems. Consider the TSOP-44 package size for board space constraints and verify thermal requirements for industrial temperature operation.

Part Context

This part belongs to the AS6C8008B series of super low-power CMOS SRAMs designed for battery-backed nonvolatile memory applications. The series emphasizes high performance and reliability for embedded storage needs. The B-series designation typically indicates specific process improvements or power optimizations compared to earlier generations within the same memory density class.

Replacement Considerations

Direct replacements include the AS6C8008-55ZIN. Verify pin compatibility and electrical parameters before substitution.