AS6C8016-55BINTR

Overview

The AS6C8016-55BINTR is an asynchronous static random access memory (SRAM) manufactured by Alliance Memory. It features a storage capacity of 8 Mbit organized as 512 k x 16 bits. The device supports a parallel interface with a maximum access time of 55 ns. It operates within a voltage range of 2.7 V to 5.5 V and has a maximum power supply current of 60 mA. The component is designed for surface mount installation in a TBGA-48 package. It functions reliably across an industrial temperature range from -40°C to +85°C.

Feature Summary

• Asynchronous CMOS SRAM technology providing fast data access capabilities
• Wide operating voltage range supporting both 3V and 5V logic systems
• Industrial temperature rating ensuring stability in demanding environments

Applications

• Data buffering in high-speed digital signal processing circuits
• Cache memory implementation in embedded microcontroller systems
• Temporary storage in industrial control and automation equipment

Procurement Notes

Verify the specific suffix BINTR against official datasheets to confirm tape-and-reel packaging versus tray configuration, as suffixes often dictate physical handling requirements. Ensure the selected variant matches the required voltage and temperature specifications for the target application environment before finalizing procurement orders.

Selection Notes

Select this component when a high-density 16-bit wide memory solution is required with moderate speed performance. The TBGA-48 package offers a compact footprint suitable for space-constrained designs. Consider the 55 ns access time relative to system clock speeds to ensure timing compatibility without requiring faster or slower alternatives.

Part Context

This part belongs to the AS6C8016 series of low-power CMOS SRAMs. It serves as a non-volatile-like temporary storage solution where data retention is maintained only during power availability. The series is characterized by high reliability and is commonly used in applications requiring rapid read/write cycles without the complexity of flash memory programming.

Replacement Considerations

Check for direct pin-compatible substitutes within the same manufacturer's portfolio that share the 512k x 16 organization and TBGA-48 package. Verify if alternative vendors offer equivalent 8Mbit asynchronous SRAMs with matching 55 ns access times and compatible voltage ranges.