AS6C8016-55TIN

Overview

The AS6C8016-55TIN is an asynchronous CMOS static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 8 Mbit, organized as 512K words by 16 bits. The device features a maximum random access time of 55 ns and operates within a supply voltage range of 2.7 V to 5.5 V. It utilizes a parallel interface and is housed in a 48-pin Thin Shrink Small Outline Package (TSOP-II). The component supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

• Asynchronous operation with parallel data interface for direct system connectivity
• Low power consumption characteristics suitable for battery-operated applications
• Industrial temperature rating ensuring reliable performance in harsh environments

Applications

• Data buffering in embedded systems
• Cache memory in microprocessor-based designs
• Storage in telecommunications equipment

Procurement Notes

Verify the specific package suffix against official datasheets, as 'TIN' may denote tape-and-reel packaging while other suffixes indicate trays. Confirm RoHS compliance status through current manufacturer documentation. Ensure the selected variant matches the required voltage and speed grades for your application design.

Selection Notes

Select this component when an 8 Mbit capacity with 16-bit word width is required. The 55 ns access time suits moderate-speed digital logic applications. Verify that the TSOP-II footprint fits the PCB layout constraints and that the 2.7 V to 5.5 V supply range aligns with the system power architecture.

Part Context

This part belongs to the AS6C8016 series of low-power SRAMs. It offers a density alternative to smaller 4 Mbit or larger 16 Mbit variants within the Alliance Memory portfolio. The 16-bit organization distinguishes it from 8-bit wide counterparts in the same family.