ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC SRAM 8MBIT PARALLEL 48TSOP I
- Series：-
- Mfr：Alliance Memory, Inc.
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：8Mbit
- Memory Organization：512K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：55ns
- Voltage - Supply：2.7V ~ 5.5V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：48-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package：48-TSOP I
- Access Time：55 ns
- Grade：-
- Qualification：-
Download product information
Overview
The AS6C8016-55TINTR is an 8 Mbit (512 K x 16) asynchronous static random-access memory (SRAM) manufactured by Alliance Memory, Inc. It features a parallel interface with a maximum access time of 55 ns. The device operates within a supply voltage range of 2.7 V to 5.5 V and draws a maximum supply current of 60 mA. It is housed in a 48-pin Thin Small Outline Package (TSOP I) designed for surface-mount technology. The component supports an industrial operating temperature range from -40°C to +85°C.
Feature Summary
- Asynchronous parallel data interface for standard memory control logic
- Wide single-supply voltage operation supporting 3.3V and 5V systems
- Industrial-grade thermal stability for extended environmental ranges
Applications
- Industrial control system memory buffers
- Embedded storage in telecommunications equipment
- Data acquisition system temporary storage
Procurement Notes
Verify the specific suffix 'TINTR' against the manufacturer's official datasheet to confirm package type and moisture sensitivity level. Ensure the ordering code matches the required 48-pin TSOP I configuration. Cross-reference RoHS compliance status directly with the latest Alliance Memory documentation before procurement.
Selection Notes
Select this component when a 512 K x 16 organization is required with 55 ns speed. It suits designs needing wide voltage tolerance between 2.7 V and 5.5 V. Consider the 48-pin TSOP I footprint for PCB layout constraints. Verify power consumption limits against system thermal budgets given the 60 mA maximum current specification.
Part Context
This part belongs to the AS6C8016 family of high-speed CMOS SRAMs. It provides non-volatile-like retention without the complexity of flash programming. The series offers various speed grades and packaging options to accommodate different board space and performance requirements in embedded applications.
Replacement Considerations
Check for AS6C8016-55BIN or AS6C8016-55ZIN as potential pin-compatible alternatives. Confirm that substitute parts maintain the same 512 K x 16 organization and 55 ns access time. Verify voltage and temperature specifications match the original design requirements.
