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The AS6C8016-55ZIN is an asynchronous static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 8 Mbit, organized as 512K words by 16 bits. The device features a maximum access time of 55 ns and operates within a voltage range of 2.7 V to 5.5 V. It utilizes a parallel interface and is housed in a TSOP-II-48 surface-mount package. The component supports single data rate (SDR) operations and functions across an industrial temperature range from -40°C to +85°C.
Verify the specific suffix ZIN against official datasheets to confirm package type and lead-free status. Confirm end-of-life or obsolescence status prior to procurement, as availability may be limited. Ensure design-in compliance with RoHS directives if required by the target application environment.
Select this component when 8 Mbit capacity and 16-bit word width are required. The 55 ns speed suits moderate-to-high frequency applications. Verify that the TSOP-II-48 footprint matches the PCB layout constraints. Ensure the system power supply remains stable within the 2.7 V to 5.5 V operating window.
This part belongs to the AS6C8016 series of asynchronous SRAMs. It shares architectural similarities with other members like the AS6C8016-55BIN but differs in packaging and specific manufacturing revisions. The series targets general-purpose memory needs where non-volatile retention is not required but fast read/write cycles are essential.
Direct pin-compatible substitutes include the AS6C8016-55BIN. Verify electrical parameters and package dimensions before substitution.