AS6C8016-55ZIN

AS6C8016-55ZIN

$6.43
  • Description:IC SRAM 8MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray

SKU:e784e4a1fb1b Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 8MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:8Mbit
  • Memory Organization:512K x 16
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 5.5V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP II
  • Access Time:55 ns

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AS6C8016-55ZIN

Overview

The AS6C8016-55ZIN is an asynchronous static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 8 Mbit, organized as 512K words by 16 bits. The device features a maximum access time of 55 ns and operates within a voltage range of 2.7 V to 5.5 V. It utilizes a parallel interface and is housed in a TSOP-II-48 surface-mount package. The component supports single data rate (SDR) operations and functions across an industrial temperature range from -40°C to +85°C.

Feature Summary

  • Asynchronous operation with 55 ns access speed for rapid data retrieval
  • Wide supply voltage compatibility ranging from 2.7 V to 5.5 V
  • Industrial-grade reliability with extended temperature support

Applications

  • Data buffering in high-speed digital systems
  • Cache memory implementation in embedded controllers
  • Storage for configuration data in industrial equipment

Procurement Notes

Verify the specific suffix ZIN against official datasheets to confirm package type and lead-free status. Confirm end-of-life or obsolescence status prior to procurement, as availability may be limited. Ensure design-in compliance with RoHS directives if required by the target application environment.

Selection Notes

Select this component when 8 Mbit capacity and 16-bit word width are required. The 55 ns speed suits moderate-to-high frequency applications. Verify that the TSOP-II-48 footprint matches the PCB layout constraints. Ensure the system power supply remains stable within the 2.7 V to 5.5 V operating window.

Part Context

This part belongs to the AS6C8016 series of asynchronous SRAMs. It shares architectural similarities with other members like the AS6C8016-55BIN but differs in packaging and specific manufacturing revisions. The series targets general-purpose memory needs where non-volatile retention is not required but fast read/write cycles are essential.

Replacement Considerations

Direct pin-compatible substitutes include the AS6C8016-55BIN. Verify electrical parameters and package dimensions before substitution.

AS6C8016-55ZINAS6C8016-55ZIN
$6.43
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