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The AS6C8016A-55BIN is an asynchronous static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 8 Mbit, organized as 512 k words by 16 bits. The device features a maximum access time of 55 ns and operates within a supply voltage range of 2.7 V to 5.5 V. It utilizes a parallel interface and is housed in a 48-pin TFBGA package suitable for surface-mount technology. The component supports single data rate (SDR) operations and functions reliably across an industrial temperature range from -40°C to +85°C.
Verify the specific suffix BIN against official datasheets to confirm the TFBGA-48 package type and lead-free status. Confirm RoHS compliance details directly with the manufacturer or authorized distributors. Check for End-of-Life notices or Product Change Notifications, as availability may be restricted. Ensure the ordering part number matches the required speed grade and voltage specifications exactly.
Select this component when a high-density 8Mbit SRAM with 55ns access speed is required in a compact surface-mount package. The wide voltage range allows compatibility with both 3.3V and 5V logic systems. Consider the TFBGA-48 footprint for PCB layout constraints. Verify that the asynchronous interface meets the system timing requirements without complex clock synchronization.
This part belongs to the AS6C8016 series of asynchronous SRAMs from Alliance Memory. It shares architectural similarities with other members like the AS6C8016-55BIN but differs in package configuration. The series is designed for general-purpose memory applications where non-volatile storage is not required but fast read/write speeds are critical for system performance.
Direct pin-to-pin replacements include the AS6C8016-55BIN. Verify electrical parameters and package dimensions before substitution. Other variants in the AS6C8016 family may offer different access times or voltage ranges.