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The AS6C8016A-55BINTR is an asynchronous static random access memory device manufactured by Alliance Memory. It provides a storage capacity of 8 Mbit, organized as 512K words by 16 bits. The component features a maximum access time of 55 ns and operates within a voltage range of 2.7 V to 5.5 V. It utilizes a parallel interface and is housed in a 48-pin Thin Quad Flat Package with no lead (TQFN) or similar surface-mount configuration designated by the BIN suffix. The device supports single data rate operation and is rated for industrial temperature ranges.
Verify the exact package type against the manufacturer datasheet, as suffixes like BIN may denote specific tape-and-reel configurations or pin assignments. Confirm RoHS compliance status and humidity sensitivity level prior to PCB design. Ensure the selected variant matches the required operating temperature range for the target application environment.
Select this component when a medium-density asynchronous memory solution is required with wide voltage tolerance. Compare access times and power consumption against competing parts if low-power operation is critical. Verify that the 16-bit word width aligns with the system bus architecture to avoid complex data masking or alignment logic.
This part belongs to the AS6C8016A series of CMOS SRAMs from Alliance Memory. The series offers various speed grades and package options to suit different design constraints. The A-series typically denotes enhanced performance or updated manufacturing processes compared to earlier generations, maintaining pin compatibility with legacy designs where applicable.
Direct replacements include other AS6C8016 variants with compatible speed grades and packages. Cross-reference pinouts carefully when substituting with generic 8Mbit SRAMs. Verify that alternative suppliers offer equivalent voltage ranges and temperature specifications.