AS6C8016A-55ZINTR

Overview

The AS6C8016A-55ZINTR is a low-power CMOS static random access memory with a capacity of 8 Mbit, organized as 512K x 16 bits. It operates within a supply voltage range of 2.7V to 3.6V and features a maximum access time of 55 ns. The device utilizes a 44-pin TSOP II package and supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

• Supports low data retention voltage for battery backup operation
• Features three-state outputs compatible with TTL logic levels
• Utilizes advanced 0.15 μm full CMOS process technology

Applications

• Battery-backed nonvolatile memory systems
• Industrial embedded control applications
• Data buffering in consumer electronics

Procurement Notes

Verify the specific voltage range requirements against the datasheet, as some sources indicate a 2.7V to 5.5V range while the official documentation specifies 2.7V to 3.6V. Confirm that the 44-pin TSOP II package matches your PCB footprint design constraints before finalizing procurement.

Selection Notes

Select this component when a 16-bit wide interface is required for system integration. Ensure the design accommodates the specified 2.7V to 3.6V power supply limits. Consider the low standby current characteristics if power efficiency during idle states is a critical design parameter.

Part Context

This part belongs to the AS6C8016A family of low-power SRAM devices manufactured by Alliance Memory. The family includes variants with different package options, such as the 48-ball FBGA, providing flexibility for various system layout requirements while maintaining identical electrical performance specifications.

Replacement Considerations

AS6C8016A-55BIN serves as a direct package alternative offering the same electrical specifications in a 48-ball FBGA format.