AS6C8016B-45BIN

Overview

The AS6C8016B-45BIN is a low-power CMOS static random access memory with an 8 Mbit capacity organized as 512K x 16. It features a parallel interface and operates within a voltage range of 2.7V to 3.6V, with a maximum supply current of 20 mA. The device offers a 45 ns access time and functions in industrial temperatures from -40°C to +85°C. It is housed in a 48-ball TFBGA package (6x8mm) with two chip select pins located at B5 and A6.

Feature Summary

• Low-power CMOS technology for reduced energy consumption
• Industrial temperature rating for reliable operation in harsh environments
• Dual chip select configuration for flexible system integration

Applications

• Battery backup nonvolatile memory systems
• Industrial control equipment requiring fast data access
• Embedded storage in consumer electronics

Procurement Notes

Verify the specific suffix BIN against official Alliance Memory documentation to confirm the exact package type, die revision, and tape-and-reel specifications. Ensure the operating voltage requirements align with the 2.7V to 3.6V range before finalizing procurement orders.

Selection Notes

Select this component when a high-density 8 Mbit SRAM is required in a compact surface-mount footprint. The 45 ns speed and low power profile make it suitable for applications where battery life and physical space are critical constraints.

Part Context

This part belongs to the AS6C8016B series of low-power SRAMs manufactured by Alliance Memory. It provides a parallel interface solution for systems needing rapid data retention without the complexity of synchronous interfaces.

Replacement Considerations

Check for AS6C8016B variants with different suffixes that may offer alternative packaging or die revisions while maintaining identical electrical characteristics.