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The AS6C8016B-45BINTR is a low-power CMOS static random-access memory manufactured by Alliance Memory. It provides an 8 Mbit storage capacity organized as 512K words by 16 bits. The device features a parallel interface with a maximum access time of 45 ns. It operates within a voltage range of 2.7 V to 3.6 V and has a maximum supply current of 20 mA. The component supports an industrial temperature range from -40°C to +85°C. It is housed in a 48-ball TFBGA package measuring 6x8 mm.
Verify the specific die revision, indicated by the 'B' suffix, against design requirements. Confirm the tape-and-reel packaging format matches automated assembly lines. Ensure the 48-ball TFBGA footprint aligns with PCB layout specifications. Validate that the 2.7V to 3.6V operating range suits the target power supply. Check for RoHS compliance documentation if required by regional regulations.
Select this part when 8 Mbit density and 45 ns speed are required in a compact form factor. Consider the switchable I/O feature if system flexibility between 8-bit and 16-bit modes is needed. Verify compatibility with existing asynchronous SRAM controllers. Evaluate the TFBGA package size constraints against available board space. Ensure the industrial temperature range meets environmental operating conditions.
This component belongs to the AS6C8016B series of low-power SRAMs from Alliance Memory. It shares architectural similarities with other devices in the family but differs in organization and package type. The B Die designation indicates a specific manufacturing iteration. It serves as a high-density memory solution for applications requiring fast random access and low power consumption.
AS6C8016B-45BIN