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Product Detailed Parameters
- Description：IC SRAM 8MBIT PARALLEL 44TSOP II
- Series：-
- Mfr：Alliance Memory, Inc.
- Package：Tray
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：8Mbit
- Memory Organization：512K x 16
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：45ns
- Voltage - Supply：2.7V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package：44-TSOP II
- Access Time：45 ns
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Overview
The AS6C8016B-45ZIN is a low-power CMOS static random access memory with an 8 Mbit capacity organized as 512K x 16 bits. It features a 45 ns access time and operates within a voltage range of 2.7 V to 3.6 V. The device utilizes a parallel interface and is housed in a 44-pin TSOP II package. It supports surface mount installation and functions reliably across an industrial temperature range from -40°C to +85°C.
Feature Summary
- Low-power CMOS technology for reduced energy consumption
- Asynchronous parallel interface for flexible system integration
- Industrial temperature rating for robust environmental operation
Applications
- Battery backup nonvolatile memory systems
- Industrial control applications requiring fast data access
- Embedded storage in consumer electronics
Procurement Notes
Verify the specific suffix ZIN confirms the industrial temperature grade and TSOP II packaging configuration against the manufacturer datasheet. Ensure voltage requirements align with the 2.7V to 3.6V specification. Confirm RoHS compliance status if required by your assembly process. Cross-reference the exact part number to avoid confusion with commercial variants or different pin counts.
Selection Notes
Select this component when a high-density 16-bit word width is required alongside low power consumption. The 45 ns speed suits general-purpose asynchronous memory needs. Verify that the 44-pin TSOP II footprint matches the PCB layout constraints. Consider the industrial temperature range if the operating environment exceeds standard commercial limits.
Part Context
This part belongs to the Alliance Memory AS6C8016B series, designed as a super low-power SRAM solution. It serves as a direct replacement for older generations of 8 Mbit SRAMs in legacy designs. The series emphasizes reliability and performance for battery-backed applications where power efficiency is critical.
Replacement Considerations
Check for AS6C8016B-45ZN or similar variants with identical electrical characteristics but different packaging options. Ensure any substitute maintains the 512K x 16 organization and 45 ns access time. Verify pin compatibility for direct socket or board replacement without schematic changes.
