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The AS6C8016B-55BINTR is an asynchronous CMOS static random access memory manufactured by Alliance Memory. It provides a storage capacity of 8 Mbit, organized as 512K words by 16 bits. The device features a maximum access time of 55 ns and operates within a supply voltage range of 2.7 V to 5.5 V. It utilizes a parallel interface and is housed in a 48-pin Thin Ball Grid Array (TBGA) package designed for surface mount technology. The component supports Single Data Rate (SDR) operation and functions reliably across an industrial temperature range from -40°C to +85°C.
Verify the specific suffix BINTR against official datasheets to confirm the tape-and-reel packaging configuration. Ensure the selected variant matches the required TBGA footprint and pinout specifications for your PCB layout. Confirm RoHS compliance status through current manufacturer documentation before finalizing procurement.
Select this component when a 512K x 16 organization with 55 ns speed is required in a compact TBGA form factor. Consider the 2.7V to 5.5V operating range for compatibility with various logic levels. Verify that the industrial temperature rating meets environmental requirements for the target application.
This part belongs to the AS6C8016B series of low-power CMOS SRAMs from Alliance Memory. These devices are engineered for applications demanding fast data access and high reliability. The series typically includes variants with different packaging options to suit diverse assembly needs.
Check for direct pin-compatible alternatives within the same AS6C8016 family or other manufacturers offering identical 512Kx16 55ns TBGA packages. Verify electrical parameters and package dimensions match exactly before substitution.
The memory is organized as 512K words by 16 bits, totaling 8 Mbit.
Yes, it is rated for operation from -40°C to +85°C.