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The AS6C8016B-55ZIN is an asynchronous CMOS static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 8 Mbit, organized as 1M x 8 bits. The device features a maximum access time of 55 ns and operates within a voltage range of 2.7 V to 3.6 V. It utilizes a parallel interface and is housed in a 44-pin TSOP package. The component supports surface-mount installation and functions reliably across an industrial temperature range from -40°C to +85°C.
Verify the specific suffix ZIN against official datasheets to confirm pinout and package dimensions. Confirm RoHS compliance status through manufacturer documentation. Check current lifecycle status as older SRAM variants may face obsolescence. Ensure ESD handling protocols are followed during assembly due to moisture sensitivity classification.
Select this part when 8 Mbit capacity and 55 ns speed meet system timing constraints. Compare power dissipation figures against thermal limits if operating near maximum voltage. Verify that the 44-pin TSOP footprint matches the PCB layout. Consider alternative packages like BGA if space constraints require smaller form factors within the same series.
This component belongs to the AS6C8016B series of low-power CMOS SRAMs. It serves as a high-reliability memory solution for applications demanding fast data access and retention. The series is designed for industrial environments where stable performance across wide temperature ranges is critical for long-term operational integrity.
AS6C8016-55ZIN: Pin-compatible alternative with potentially different lifecycle status.