AS6C8016B-55ZIN

AS6C8016B-55ZIN

$5.48
  • Description:IC SRAM 8MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray

SKU:083e53a63fb5 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 8MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:8Mbit
  • Memory Organization:512K x 16
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP II
  • Access Time:55 ns

Download product information

AS6C8016B-55ZIN

Overview

The AS6C8016B-55ZIN is an asynchronous CMOS static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 8 Mbit, organized as 1M x 8 bits. The device features a maximum access time of 55 ns and operates within a voltage range of 2.7 V to 3.6 V. It utilizes a parallel interface and is housed in a 44-pin TSOP package. The component supports surface-mount installation and functions reliably across an industrial temperature range from -40°C to +85°C.

Feature Summary

  • Asynchronous operation for flexible data access without external clock synchronization
  • CMOS technology ensuring low power consumption suitable for battery-backed applications
  • Wide supply voltage compatibility supporting both 3V and 5V logic systems

Applications

  • Battery backup nonvolatile memory systems
  • Industrial control equipment requiring reliable data retention
  • Embedded systems with fast random access requirements

Procurement Notes

Verify the specific suffix ZIN against official datasheets to confirm pinout and package dimensions. Confirm RoHS compliance status through manufacturer documentation. Check current lifecycle status as older SRAM variants may face obsolescence. Ensure ESD handling protocols are followed during assembly due to moisture sensitivity classification.

Selection Notes

Select this part when 8 Mbit capacity and 55 ns speed meet system timing constraints. Compare power dissipation figures against thermal limits if operating near maximum voltage. Verify that the 44-pin TSOP footprint matches the PCB layout. Consider alternative packages like BGA if space constraints require smaller form factors within the same series.

Part Context

This component belongs to the AS6C8016B series of low-power CMOS SRAMs. It serves as a high-reliability memory solution for applications demanding fast data access and retention. The series is designed for industrial environments where stable performance across wide temperature ranges is critical for long-term operational integrity.

Replacement Considerations

AS6C8016-55ZIN: Pin-compatible alternative with potentially different lifecycle status.

AS6C8016B-55ZINAS6C8016B-55ZIN
$5.48
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