ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC SRAM 4MBIT PAR
- Series：-
- Mfr：Alliance Memory, Inc.
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Single Port, Asynchronous
- Memory Size：4Mbit
- Memory Organization：256K x 16
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：45ns
- Voltage - Supply：2.7V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package：44-TSOP II
- Access Time：45 ns
Download product information
Overview
The AS6CE4016B-45ZINTR is a 4Mbit (256K x 16) low-power CMOS static random access memory with integrated ECC. It operates on a single 2.7V to 3.6V supply and features a 45ns access time. The device is housed in a 44-pin TSOP II package, supports industrial temperature ranges (-40°C to +85°C), and includes address multiplexing for reduced pin count.
Feature Summary
- Integrated error correction code circuitry for data integrity
- Low power consumption with active and standby modes
- Single voltage supply operation within specified range
- Address multiplexing to minimize external component requirements
Applications
- Industrial control systems requiring high reliability
- Embedded storage applications with limited power budgets
- Data logging modules needing error protection
- Automotive electronics operating in harsh environments
Procurement Notes
Verify the specific suffix ZINTR corresponds to the tape and reel packaging configuration as indicated by distributor listings. Confirm that the ECC functionality is enabled in your system design, as this distinguishes it from standard SRAM variants. Ensure voltage levels strictly adhere to the 2.7V–3.6V specification to prevent damage.
Selection Notes
Select this part when ECC support is mandatory for the application architecture. Compare against the AS6C4016 series if a wider voltage range (up to 5.5V) is required, noting that the CE4016B is optimized for lower voltage operations. Verify package compatibility with the 44-pin TSOP II footprint during PCB layout.
Part Context
This component belongs to Alliance Memory's AS6CE4016B family of low-power SRAMs. It shares the 256K x 16 organization with other models but integrates ECC logic. Variants differ primarily in access speed and voltage tolerance, with this specific model targeting industrial-grade reliability at 45ns.
Replacement Considerations
Direct substitutes include other AS6CE4016B variants with different access times or packaging options, such as the AS6CE4016B-45ZIN. Cross-referencing with the AS6C4016 series is possible only if ECC is not required and voltage constraints allow.
