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Product Detailed Parameters
- Description：IC SRAM 1MBIT PARALLEL 44TSOP
- Series：-
- Mfr：Alliance Memory, Inc.
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Single Port, Asynchronous
- Memory Size：1Mbit
- Memory Organization：64K x 16
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：20ns
- Voltage - Supply：4.5V ~ 5.5V
- Operating Temperature：-40°C ~ 85°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package：44-TSOP2
- Access Time：20 ns
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Overview
The AS7C1026B-20TINTR is a 1 Mbit (64 K x 16) asynchronous static random-access memory manufactured by Alliance Memory. It operates within a voltage range of 4.5 V to 5.5 V and features a maximum access time of 20 ns. The device supports industrial temperature operation from -40°C to +85°C. It utilizes a parallel interface and is housed in a 44-pin TSOP II surface-mount package. Maximum supply current is specified at 80 mA.
Feature Summary
- Asynchronous SRAM architecture with parallel data interface
- Industrial-grade temperature rating for extended environmental stability
- Single 5V power supply operation
Applications
- Industrial control systems requiring reliable data retention
- Embedded applications operating in extreme temperature environments
- High-speed buffering in 5V logic circuits
Procurement Notes
Verify the complete part number against official manufacturer documentation to ensure correct suffix alignment. Confirm that the 'IN' designation corresponds to the required industrial temperature range and the 'TR' indicates tape-and-reel packaging. Cross-reference electrical specifications with the latest datasheet to validate voltage and timing parameters before integration.
Selection Notes
Select this component when a 64 K x 16 organization is required for 5V systems. Ensure the design accommodates the 44-pin TSOP II footprint. Verify that the 20 ns access speed meets system timing requirements. Consider the industrial temperature range if the application environment exceeds commercial limits.
Part Context
This part belongs to the AS7C1026B series of high-speed asynchronous SRAMs. It provides non-volatile-like data retention without the complexity of flash programming. The series is designed for applications needing fast read/write cycles and low power consumption in standard 5V logic environments.
Replacement Considerations
Check for direct pin-compatible alternatives within the same family, such as different access speeds or packaging options. Verify that any substitute maintains the 64 K x 16 density and 5V operating voltage. Ensure thermal ratings match the intended application environment.
