AT25DN512C-SSHFGP-T

Memory IC Overview

The AT25DN512C-SSHFGP-T is a non-volatile NOR flash memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a storage capacity of 512 Kbit, organized as 64K x 8 bits. The device utilizes an SPI interface with a maximum clock frequency of 104 MHz. It operates within a supply voltage range of 2.3V to 3.6V and supports a wide operating temperature range from -40°C to 85°C. The component is housed in an 8-TSSOP package.

Memory IC Feature Summary

• Supports Single and Dual SPI modes for flexible data transfer
• High-speed synchronous serial interface operation
• Wide supply voltage range for diverse system integration

Memory IC Applications

• Consumer electronics requiring compact non-volatile storage
• Industrial control systems needing reliable data retention
• Embedded applications utilizing SPI communication protocols

Memory IC Procurement Notes

Verify the specific suffix 'SSHFGP' against official Renesas documentation to confirm exact packaging and tape/reel specifications. Ensure compatibility with standard SPI controllers and validate voltage levels before integration. Confirm RoHS compliance status through current manufacturer certificates.

Memory IC Selection Notes

Select this component when a small footprint and low power consumption are required for 512 Kbit storage needs. The TSSOP package suits space-constrained designs. Verify that the 2.3V minimum voltage aligns with the target system's power rails and that the 104 MHz speed meets application timing requirements.

Memory IC Part Context

This part belongs to the AT25DF/DN series of SPI NOR flash memories from Renesas. These devices are designed for code execution and data storage in embedded systems. The series offers various capacities and packages to support different design constraints while maintaining high reliability and performance standards.

Memory IC Replacement Considerations

AT25DN512C-XMHF-T is listed as a similar alternative in distributor databases. Verify pinout and electrical characteristics match before substitution.