AT28BV16-25TI

Memory IC Overview

The AT28BV16-25TI is a 16K-bit (2,048 x 8) parallel EEPROM manufactured by Microchip Technology. It operates within a 2.7V to 3.6V supply range and features a 250 ns access time. The device supports byte write operations with a cycle time of 3 ms. It includes data polling and ready/busy outputs for microprocessor control. The component is housed in a 28-lead TSOP package and is rated for industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

• Supports direct microprocessor control via data polling and open-drain ready/busy output signals.
• Provides hardware write protection through VCC sense and power-on delay mechanisms.
• Includes an extra 32-byte EEPROM section dedicated to device identification or tracking.

Memory IC Applications

• Non-volatile data storage in industrial embedded systems
• Configuration memory for microprocessor-based controllers
• Device identification and tracking in manufacturing workflows

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's current valid part number table to ensure correct package and temperature grade alignment. Confirm that the required voltage levels match the 2.7V to 3.6V operational range. Check for any export restrictions or documentation requirements associated with the component before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a low-power, high-reliability EEPROM with fast access times is required for industrial environments. The 250 ns speed and 100,000 cycle endurance make it suitable for frequent write applications. Ensure the system design accommodates the 2.7V to 3.6V supply voltage and utilizes the appropriate 28-lead TSOP footprint for surface mount assembly.

Memory IC Part Context

This device belongs to the AT28BV16 series of Battery-Voltage parallel EEPROMs. It is manufactured using CMOS technology designed for low power dissipation and high reliability. The series offers various package options including TSOP, PLCC, PDIP, and SOIC, catering to different mounting and density requirements across commercial and industrial applications.

Memory IC Replacement Considerations

Compatible substitutes include other AT28BV16 variants with different speed grades or packages, such as AT28BV16-30TI. Cross-reference pinouts and electrical specifications carefully to ensure functional equivalence without modifying the existing circuit design.

Memory IC FAQ

How does the device indicate the completion of a write cycle?

Completion is indicated via data polling on I/O 7, where the complement of the written data appears during the busy state, or through the RDY/BUSY open-drain output which releases upon completion.

What protections are in place to prevent inadvertent writes?

The device includes VCC sense inhibition below 2.0V, a 5 ms power-on delay timer, and write inhibit logic that blocks cycles if OE is low, CE is high, or WE is high.