AT28HC64BF-12TU

Memory IC Overview

The AT28HC64BF-12TU is a 64K (8K x 8) parallel EEPROM manufactured by Microchip Technology. It features a maximum access time of 120 ns and operates on a single 5 V ±10% power supply. The device supports active current consumption of 40 mA and standby current of 100 µA. It utilizes a 28-lead Plastic Thin Small Outline Package (TSOP).

Memory IC Feature Summary

• Supports automatic page write operations with internal address and data latches for up to 64 bytes.
• Includes hardware and software data protection mechanisms to prevent inadvertent writes.
• Provides DATA Polling and Toggle Bit functionality for end-of-write cycle detection.

Memory IC Applications

• Industrial temperature range memory storage applications
• Systems requiring high reliability CMOS technology
• Applications needing software-controlled data protection

Memory IC Procurement Notes

Verify the specific suffix TU corresponds to the 28-lead TSOP package configuration. Confirm that the -12 speed grade matches the required 120 ns access time specifications. Ensure the industrial temperature range (-40°C to 85°C) aligns with the operational environment requirements.

Memory IC Selection Notes

Select this component when a 64Kbit non-volatile memory solution with parallel interface is required. Consider the TSOP package for surface-mount assembly constraints. Evaluate the 120 ns access time against system timing requirements and verify compatibility with 5V logic levels.

Memory IC Part Context

This part belongs to the AT28HC64BF series, which offers high-speed parallel EEPROM capabilities. The series includes variants with different access times and packages, such as PLCC, PDIP, and SOIC. The BF designation indicates specific feature sets including page write and software data protection.

Memory IC Replacement Considerations

Compatible substitutes include AT28HC64BF-70TU and AT28HC64BF-90TU for faster access times within the same package. Other package options like AT28HC64BF-12SU or AT28HC64BF-12JU offer equivalent electrical performance in different form factors.