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Product Detailed Parameters
- Description:DIODE AVALANCHE 800V 1A DO219AB
- Series:-
- Mfr:Vishay General Semiconductor - Diodes Division
- Package:Tape & Reel (TR),Cut Tape (CT)
- Technology:Avalanche
- Voltage - DC Reverse (Vr) (Max):800 V
- Current - Average Rectified (Io):1A
- Voltage - Forward (Vf) (Max) @ If:1.85 V @ 1 A
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):75 ns
- Current - Reverse Leakage @ Vr:1 µA @ 800 V
- Capacitance @ Vr, F:8.2pF @ 4V, 1MHz
- Mounting Type:Surface Mount
- Package / Case:DO-219AB
- Supplier Device Package:DO-219AB (SMF)
- Operating Temperature - Junction:-55°C ~ 175°C
- Grade:Automotive
- Qualification:AEC-Q101
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Overview
The AU1FKHM3/H is an avalanche-rated fast recovery rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum repetitive peak reverse voltage of 800 V and an average forward rectified current of 1 A. The device utilizes the DO-219AB (SMF) surface-mount package. Key electrical characteristics include a maximum non-repetitive peak surge current of 25 A, a typical reverse leakage current of 1 µA at 800 V, and a maximum forward voltage of 1.85 V at 1 A. The component is designed for high-speed switching applications with an ultrafast recovery time.
Feature Summary
- Incorporates avalanche ruggedness to withstand transient energy events without failure
- Utilizes ultrafast recovery technology for high-frequency switching efficiency
- Engineered with low thermal resistance for reliable operation in compact designs
Applications
- High-voltage DC-DC converter circuits
- Uninterruptible power supply (UPS) systems
- Industrial motor drive freewheeling paths
Procurement Notes
Verify the specific suffix designation against official Vishay documentation to confirm exact electrical tolerances and packaging configuration. Ensure that the procurement source provides valid traceability and authenticity certificates. Confirm that the delivered components match the specified DO-219AB package dimensions and pinout arrangement prior to integration into production assemblies.
Selection Notes
Select this component when circuit design requires robustness against inductive kickback or voltage spikes exceeding standard breakdown limits. The 800 V rating provides sufficient headroom for high-voltage bus applications. Consider the 1 A current capacity relative to thermal management constraints within the SMF footprint. Evaluate the ultrafast recovery characteristics against electromagnetic interference requirements in the target system topology.
Part Context
This part belongs to Vishay's AU1F series of avalanche-rated fast recovery diodes. These components are engineered for demanding power electronics environments where standard rectifiers might fail due to repetitive avalanche stress. The series offers a balance of high voltage blocking capability and rapid switching performance suitable for modern efficient power conversion architectures.
Replacement Considerations
Direct substitutes include other Vishay avalanche-rated diodes from the same series, such as the AU1FMHM3/H or AU1FKHM3/I, provided they meet identical voltage, current, and package specifications. Cross-manufacturer replacements require careful verification of avalanche energy ratings and thermal characteristics.
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