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The AZ23B10-E3-08 is a dual common-anode Zener diode array manufactured by Vishay General Semiconductor - Diodes Division. It features a nominal Zener voltage of 10 V with a tight tolerance of ±2%. The device operates within an ambient temperature range of -55 °C to +150 °C and dissipates up to 300 mW on an FR-4 board. Electrical characteristics include a maximum reverse leakage current of 0.1 µA at 7.5 V and a dynamic resistance of 15 Ω at the test current of 5 mA. It is housed in a compact SOT-23 surface-mount package.
Verify the specific ordering suffix against the manufacturer's documentation to confirm tape-and-reel specifications and minimum order quantities. Ensure that the component meets RoHS compliance requirements for your assembly process. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement orders.
Select this component when a dual Zener array with high voltage accuracy is required in a small footprint. The ±2% tolerance makes it suitable for precision analog applications. Consider the thermal resistance and power dissipation limits relative to the expected operating environment and PCB copper area available for heat sinking.
This part belongs to the AZ23 series of small signal Zener diodes from Vishay. The series offers a wide range of Zener voltages from 2.2 V to 75 V, packaged in SOT-23. The 'B' designation indicates the tighter ±2% voltage tolerance compared to the standard ±5% 'C' variant, providing enhanced stability for critical voltage regulation tasks.
AZ23B10-E3-18
The dynamic resistance (ZZ) is specified as a maximum of 15 Ω at a test current of 5 mA.
No, the base P/N-E3 is a commercial grade device. Automotive qualification is available only for the HE3_A variants.
The maximum reverse leakage current is 0.1 µA, measured at a reverse voltage of 7.5 V.