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The AZ23B11-G3-08 is a dual common anode silicon planar Zener diode array from the Vishay AZ23-G series, housed in a SOT-23 surface-mount package. It features a nominal Zener voltage of 11 V with a tight ±2 % tolerance. The device operates at a test current of 5 mA and exhibits a maximum dynamic resistance of 20 Ω. Electrical characteristics include a reverse leakage current of 0.1 μA at 8.5 V and a temperature coefficient ranging from 5 to 9 x 10⁻⁴/°C. It supports an operating temperature range of -55 °C to +150 °C and provides high ESD protection exceeding 8 kV (HBM) and 800 V (MM).
Verify the specific ordering code suffix against official documentation to confirm reel size and tape specifications. Confirm RoHS compliance status and material categorization details directly with the manufacturer or authorized distributors prior to procurement. Ensure that the selected component meets all required environmental and electrical specifications for the intended application environment.
Select this part when a dual Zener array with strict ±2 % voltage accuracy is required in a compact SOT-23 footprint. Consider the thermal resistance and power dissipation limits relative to the ambient operating conditions. Verify that the dynamic impedance and leakage current parameters align with the sensitivity requirements of the target circuit design.
This component belongs to the AZ23-G series of small signal Zener diodes manufactured by Vishay Semiconductors. The series offers a wide range of graded Zener voltages from 2.2 V to 75 V. The 'B' designation indicates the tighter ±2 % tolerance variant compared to the standard ±5 % 'C' grade devices within the same family.
AZ23B11-E3-08
The marking code for the AZ23B11-G3-08 is DE6.
The maximum reverse leakage current is 0.1 μA, measured at a reverse voltage of 8.5 V.
Yes, the AZ23-G series is available with AEC-Q101 qualification, providing ESD capability greater than 8 kV via the human body model.