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The AZ23B13-G3-08 is a dual common anode silicon planar Zener diode array from the Vishay AZ23-G series, housed in a SOT-23 surface-mount package. It features a nominal Zener voltage of 13 V with a tight ±2 % tolerance. The device operates at a test current of 5 mA and provides a maximum reverse leakage current of 0.1 µA at 10 V. Dynamic resistance is specified at 25 Ω (at IZT1) and 110 x 10^-4/°C for the temperature coefficient. It supports an operating temperature range from -55 °C to +150 °C and dissipates up to 300 mW on an FR-4 board.
Verify component authenticity by cross-referencing the manufacturer's document number 86339 and revision 1.2 against official Vishay records. Confirm that the ordering suffix G3-08 corresponds to green commercial grade packaging on an 8 mm tape reel. Ensure compliance requirements match specific project standards before finalizing acquisition.
Select this variant when strict ±2 % voltage accuracy is mandatory compared to the standard ±5 % C-series options. The dual common anode topology allows independent clamping or referencing using a single shared ground node. Verify that the 300 mW power dissipation limit on FR-4 substrates accommodates the expected thermal load in the target application environment.
This component belongs to the AZ23-G series of small signal Zener diodes manufactured by Vishay General Semiconductor. The series utilizes silicon planar technology and offers a wide range of graded voltages from 2.2 V to 75 V. The B-suffix specifically denotes the tighter 2 % tolerance band available within this standardized product family.
AZ23B13-E3-08
The dynamic resistance ZZ at IZT1 (5 mA) is specified as a maximum of 25 Ω.
The device is marked with the code DE8 on the top surface to distinguish it within the SOT-23 package.
The maximum reverse leakage current IR is 0.1 µA when measured at a reverse voltage VR of 10 V.