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The AZ23B30-E3-08 is a dual common anode silicon planar Zener diode array manufactured by Vishay Semiconductors. It features a nominal Zener voltage of 30 V with a tight tolerance of ±2%. The device operates within a test current range of 2 mA to 5 mA and exhibits a maximum reverse leakage current of 50 µA at 22 V. Dynamic resistance is specified at 80 Ω, while the temperature coefficient ranges from 8 to 10 × 10⁻⁴/°C. Rated for surface mount installation in an SOT-23 package, it supports power dissipation up to 500 mW and functions reliably across an operating temperature range of -55 °C to +150 °C.
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Select this variant when strict ±2% voltage accuracy is mandatory. Ensure thermal management accommodates the 500 mW dissipation limit. Verify that the common anode topology aligns with the intended circuit polarity and ground references.
This component belongs to the AZ23 series of small signal Zener diodes. The 'B' designation indicates the tighter ±2% tolerance grade, distinguishing it from the standard ±5% 'C' grade variants within the same physical package family.
AZ23B30-E3-18
The dynamic resistance (ZZ) is specified as a maximum of 80 Ω when tested at IZT1.
No, the base P/N-E3 designation indicates commercial grade. AEC-Q101 qualified versions utilize the HE3_A suffix.
Both Zener diodes share a single anode terminal, allowing their cathodes to be used independently for separate voltage regulation or clamping tasks.