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The AZ23B30-HE3-18 is a silicon planar Zener diode array from the Vishay AZ23 series, housed in an SOT-23 package. It features a dual common-anode configuration with a nominal Zener voltage of 30 V and a tight tolerance of ±2%. The device operates within a junction temperature range of -55 °C to +150 °C and supports a maximum power dissipation of 500 mW on leads or 300 mW on an FR-4 board. It is AEC-Q101 qualified for automotive applications and offers high ESD protection capability.
Verify that the ordering code suffix matches the required tape-and-reel quantity and packaging specifications. Confirm RoHS compliance status and ensure the component meets specific automotive qualification requirements if deployed in regulated environments. Cross-reference the manufacturer's latest documentation for any potential obsolescence notices or assembly changes.
Select this variant when a ±2% voltage tolerance is mandatory for circuit accuracy. Ensure the application current does not exceed the specified test current limits to maintain stable regulation. Verify thermal management capabilities, as power dissipation drops significantly at elevated ambient temperatures above 25 °C.
This component belongs to the AZ23 series of small-signal Zener diodes manufactured by Vishay General Semiconductor. The series provides a wide range of standard Zener voltages from 2.2 V to 75 V in a space-saving SOT-23 footprint, catering to both commercial and automotive discrete semiconductor needs.
AZ23B30-E3-18
The maximum dynamic resistance (ZZ) at the test current IZT1 is 80 Ohms.
The maximum reverse leakage current (IR) is specified as 0.05 μA when measured at a reverse voltage (VR) of 22 V.
The temperature coefficient (αVZ) ranges from a minimum of 8 x 10⁻⁴/°C to a maximum of 10 x 10⁻⁴/°C.