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The AZ23B3V3-E3-08 is a dual common anode silicon planar Zener diode array from Vishay Semiconductors. It features a nominal Zener voltage of 3.3 V with a tight tolerance of ±2%. The device operates within a test current range of 1 to 5 mA and exhibits a maximum reverse leakage current of 5 μA at 3 V. Dynamic resistance is specified at 95 Ω, with a temperature coefficient ranging from -8 to -3 x 10⁻⁴/°C. It is housed in a compact SOT-23 package, supporting surface mount assembly with a maximum power dissipation of 300 mW on FR-4 boards.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm tape-and-reel specifications and minimum order quantities. Ensure compliance with RoHS directives and material categorization requirements relevant to the target application environment before finalizing procurement orders.
Select this component when a dual Zener array with high voltage accuracy is required in a small footprint. The ±2% tolerance distinguishes it from standard ±5% variants. Confirm that the operating temperature range of -55 °C to +150 °C aligns with the system's thermal constraints and that the SOT-23 package dimensions fit the PCB layout.
This part belongs to the AZ23 series of small signal Zener diodes manufactured by Vishay General Semiconductor. The series offers a wide range of Zener voltages from 2.2 V to 75 V in both single and dual configurations. The 'B' designation indicates the tighter ±2% tolerance grade compared to the standard 'C' grade.
AZ23B3V3-G3-08
The dynamic resistance (ZZ) is specified as a maximum of 95 Ω at a test current of 1 mA.
No, the base P/N-E3 variant is commercial grade. Automotive qualification (AEC-Q101) is available only in the HE3_A variant.
The marking code for the AZ23B3V3-E3-08 is DD3.