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The AZ23B4V7-G3-18 is a dual common anode silicon planar Zener diode array manufactured by Vishay General Semiconductor - Diodes Division. It features a nominal Zener voltage of 4.7 V with a tight tolerance of ±2%, tested at a current of 5 mA. The device operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 300 mW on an FR-4 board. Packaged in a compact SOT-23 (TO-236-3) surface-mount housing, it utilizes the 'DD7' marking code. The suffix '-G3' indicates compliance with RoHS standards and green manufacturing processes, while '-18' specifies a standard reel quantity of 10,000 units.
Verify the specific ordering suffix against official documentation to confirm packaging quantities and material compliance. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the full part number with the latest Vishay datasheet revision to validate current production status and availability constraints before finalizing orders.
Select this component when a precise 4.7 V reference is required in a dual-diode topology. The ±2% tolerance makes it suitable for applications demanding tighter voltage accuracy than standard commercial grades. Verify that the operating environment remains within the specified -55 °C to +150 °C range and that the PCB layout accommodates the SOT-23 footprint for optimal thermal dissipation.
This device belongs to the AZ23-G series of small signal Zener diodes, which offers a wide range of graded voltages from 2.2 V to 75 V. The series provides both standard (±5%) and precision (±2%) tolerance options across various package configurations. The AZ23B4V7 variant specifically targets applications needing higher accuracy than the baseline C-series devices.
AZ23B4V7-E3-18
The maximum dynamic resistance (ZZ) at the test current of 5 mA is 78 Ω.
No, the standard AZ23B4V7-G3-18 is not AEC-Q101 qualified; automotive-grade versions are available upon request.
The maximum reverse leakage current is 3 μA when measured at a reverse voltage of 2 V.