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The AZ23B51-G3-08 is a dual common anode silicon planar Zener diode array from the Vishay AZ23-G series, housed in a SOT-23 surface-mount package. It features a nominal Zener voltage of 51 V with a tight tolerance of ±2%. The device operates at a test current of 2 mA and dissipates up to 300 mW on an FR-4 board. Electrical characteristics include a maximum reverse leakage current of 50 μA at 38 V and a dynamic resistance of 100 Ω at 2 mA. The unit supports an operating temperature range from -55 °C to +150 °C.
Verify component authenticity by cross-referencing the manufacturer's document number 86339 and revision 1.2 against official Vishay channels. Confirm that the ordering suffix G3 indicates compliance with RoHS directives and material categorization standards. Ensure the specific tape-and-reel packaging matches the required quantity specifications for production integration.
Select this variant when a precise 51 V breakdown voltage is required alongside strict manufacturing tolerances. The dual common anode structure allows for independent control of two Zener paths within a single footprint. Verify that the 300 mW power dissipation rating aligns with the thermal management capabilities of the target printed circuit board layout.
This component belongs to the AZ23-G series of small signal Zener diodes manufactured by Vishay Semiconductors. The series utilizes silicon planar technology and offers various voltage grades according to the E24 standard. The B designation specifically denotes the tighter ±2% tolerance band compared to the standard C grade.
AZ23C51-G3-08
The marking code for this device is DG2.
For voltages above 27 V, such as the 51 V model, both the B and C grades utilize a test current of 2 mA.
The maximum dynamic resistance (ZZ) at the test current of 2 mA is 100 Ω.