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The AZ23B8V2-HE3-08 is a dual common anode silicon planar Zener diode array manufactured by Vishay General Semiconductor - Diodes Division. It features a nominal Zener voltage of 8.2 V with a tight tolerance of ±2%. The device operates within a test current range of 1 to 5 mA and exhibits a maximum reverse leakage current of 0.1 µA at 6 V. Dynamic resistance is specified at 7 Ω, while the temperature coefficient ranges from 4 to 7 x 10⁻⁴/°C. Rated for power dissipation up to 500 mW, it supports an operating temperature range of -55 °C to +150 °C and is housed in a compact SOT-23 package.
Verify that the ordering suffix HE3_A confirms AEC-Q101 automotive qualification and RoHS compliance. Confirm the specific tape and reel packaging format matches production requirements. Ensure the manufacturer designation aligns with Vishay General Semiconductor - Diodes Division specifications before finalizing procurement orders.
Select this variant when a dual common anode topology is required alongside strict ±2% voltage tolerance. The AEC-Q101 qualification makes it suitable for automotive environments where high reliability and ESD robustness are mandatory. Verify thermal management capabilities against the 500 mW absolute maximum rating during design integration.
This component belongs to the AZ23 series of small signal Zener diodes produced by Vishay Semiconductors. The series offers a wide Zener voltage range from 2.2 V to 75 V across various tolerance grades. The AZ23B8V2-HE3-08 specifically represents the 8.2 V option within the high-precision B-tolerance subset of this family.
AZ23B8V2-E3-08 (Commercial grade equivalent)
The dynamic resistance (ZZ) is specified as a maximum of 7 Ω at a test current of 1 mA.
Yes, the HE3_A suffix indicates that the device is qualified according to AEC-Q101 standards for automotive applications.
The maximum reverse leakage current (IR) is 0.1 µA when measured at a reverse voltage of 6 V.