SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AZ23B8V2-HE3_A-18 is a silicon planar Zener diode from the AZ23 series, manufactured by Vishay General Semiconductor - Diodes Division. It features an 8.2 V nominal Zener voltage with a ±2% tolerance and operates in a common anode configuration within a SOT-23 package. The device is AEC-Q101 qualified for automotive applications and complies with RoHS standards. Electrical characteristics include a maximum reverse leakage current of 0.1 µA at 7 V and a dynamic resistance of 7 Ω at a test current of 5 mA. It supports a junction temperature up to 150 °C and is supplied in tape-and-reel packaging.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific ordering suffix matches the required AEC-Q101 qualification and reel quantity specifications. Ensure compliance with applicable regional regulatory standards prior to integration into final assemblies.
Select this variant when a precise 8.2 V Zener voltage with tight ±2% tolerance is required. The HE3_A suffix indicates AEC-Q101 qualification suitable for automotive environments. Verify thermal management requirements against the specified power dissipation limits on FR-4 boards versus lead-clamped conditions.
This component belongs to the AZ23 series of small signal Zener diodes offered by Vishay Semiconductors. The series provides a wide range of graded Zener voltages according to the E24 standard. The AZ23B8V2 designation specifically denotes the 8.2 V breakdown voltage with the tighter B-series tolerance band.
AZ23B8V2-E3-18
The dynamic resistance (ZZ) is 7 Ω, measured at a test current (IZT1) of 5 mA.
Yes, the HE3_A suffix indicates that the device is AEC-Q101 qualified for automotive applications.
The maximum reverse leakage current (IR) is 0.1 µA, tested at a reverse voltage (VR) of 7 V.