AZ23C33-G3-08

Overview

The AZ23C33-G3-08 is a dual common anode silicon planar Zener diode array from the Vishay AZ23-G series, housed in a SOT-23 surface-mount package. It features a nominal Zener voltage of 33 V with a standard tolerance of ±5%. The device operates at a test current of 2 mA and dissipates up to 300 mW on an FR-4 board. Electrical characteristics include a maximum reverse leakage current of 50 μA at 25 V and a dynamic resistance of 80 Ω at 1 kHz.

Feature Summary

• Dual common anode configuration for space-efficient circuit design
• Graded Zener voltages according to international E24 standards
• ESD protection capability exceeding 8 kV via human body model

Applications

• Voltage reference circuits requiring dual stable potentials
• Clamping and protection stages in signal processing paths
• Biasing networks in low-power electronic modules

Procurement Notes

Verify component authenticity by cross-referencing the ordering code against official Vishay documentation. Confirm that the suffix G3 indicates compliance with green commercial grade material categorization requirements. Ensure procurement channels provide traceability data consistent with RoHS3 specifications before finalizing acquisition.

Selection Notes

Select this variant when a 33 V nominal breakdown voltage with ±5% tolerance is required. The dual common anode topology allows independent regulation using two separate cathodes. Verify that the 300 mW power dissipation rating on FR-4 meets the thermal constraints of the target application environment.

Part Context

This component belongs to the AZ23-G series of small signal Zener diodes manufactured by Vishay Semiconductors. The series offers a wide range of Zener voltages from 2.2 V to 75 V in the SOT-23 package. The 'C' designation specifically denotes the standard ±5% voltage tolerance grading within this product family.

Replacement Considerations

Substitutes must match the dual common anode configuration, SOT-23-3 package, and 33 V nominal Zener voltage. Verify that alternative components meet or exceed the 300 mW power dissipation rating and maintain similar dynamic resistance and leakage current specifications.