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The AZ23C51-HE3-08 is a silicon planar Zener diode from the Vishay AZ23 series, housed in an SOT-23 surface-mount package. It features a common anode configuration with a nominal Zener voltage of 51 V and a tolerance of ±5%. The device operates within a junction temperature range of -55 °C to +150 °C and supports a maximum power dissipation of 500 mW (300 mW on FR-4). Key electrical parameters include a reverse leakage current of 50 μA at 45 V, a dynamic resistance of 100 Ω at 2 mA, and a temperature coefficient ranging from 9 to 11 x 10⁻⁴/°C. It is AEC-Q101 qualified for automotive applications.
Verify the specific ordering suffix against official documentation to confirm tape-and-reel quantities and packaging standards. Confirm that the HE3 designation aligns with required AEC-Q101 qualification levels for your target application environment before finalizing procurement specifications.
Select this component when a 51 V Zener voltage with ±5% tolerance is required in a compact SOT-23 footprint. Ensure the design accommodates the specified 100 Ω dynamic resistance and 50 μA leakage current limits under operating conditions. Verify thermal management requirements against the 250 K/W junction-to-lead thermal resistance rating.
This part belongs to the AZ23 series of small signal Zener diodes manufactured by Vishay General Semiconductor. The series offers a wide voltage range from 2.2 V to 75 V in the SOT-23 package. The HE3 suffix indicates RoHS compliance and AEC-Q101 qualification, distinguishing it from commercial grade variants.
AZ23C51-E3-08
The dynamic resistance (ZZ) is 100 Ω, measured at a test current of 2 mA.
Yes, the HE3 variant is AEC-Q101 qualified, making it suitable for automotive environments.
The maximum reverse leakage current is 50 μA, specified at a reverse voltage of 45 V.