SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AZ23C68-HE3_A-08 is a silicon planar Zener diode array configured as a dual common anode pair. It provides a nominal Zener voltage of 68 V with a tolerance of ±5%. The device operates at a test current of 2 mA and features a maximum reverse leakage current of 51 µA at 51 V. Dynamic resistance is specified at 200 Ω (ZZ) and 475 Ω (ZZK). It is AEC-Q101 qualified, housed in an SOT-23 package, and rated for junction temperatures up to 150 °C.
Verify the specific HE3_A suffix confirms AEC-Q101 qualification status. Confirm the tape and reel packaging matches the required manufacturing equipment specifications. Ensure the ordering code aligns with the intended voltage tolerance and configuration requirements for the target application design.
Select this component when a dual Zener solution is required in a minimal footprint. The common anode topology simplifies circuit layout compared to discrete pairs. Verify that the 68 V breakdown voltage and 2 mA test current are compatible with the system's power budget and operational range.
This part belongs to the Vishay AZ23 series of small signal Zener diodes. The series offers various voltage grades from 2.2 V to 75 V. The HE3_A variant specifically denotes RoHS compliance combined with automotive-grade qualification, distinguishing it from standard commercial grade E3 versions.
AZ23C68-HE3-08
The dynamic resistance (ZZ) is 200 Ω at the test current, while the knee dynamic resistance (ZZK) is 475 Ω.
The HE3_A suffix indicates that the device is RoHS-compliant and qualified to the AEC-Q101 automotive reliability standard.
The device supports an operating temperature range from -55 °C to +150 °C.