B10G2324N10DLZ

Specialized ICS Overview

The B10G2324N10DL is a 2-stage, 10 W fully integrated Doherty Monolithic Microwave Integrated Circuit (MMIC) utilizing Ampleon LDMOS technology. It integrates the carrier and peaking devices, input splitter, output combiner, and matching networks within a single package. Designed for the 2300 MHz to 2400 MHz frequency range, it offers high efficiency and excellent thermal stability. The device features independent control of carrier and peaking bias voltages and includes integrated ESD protection. RF performance at Tcase = 25 °C with VDS = 28 V shows a typical power gain of 31.5 dB, drain efficiency of 42.6%, and an output power at 3 dB compression of 39.8 dBm.

Specialized ICS Feature Summary

• Integrated Doherty architecture combining carrier/peaking devices, input splitter, and output combiner in a 7 mm x 7 mm LGA-7x7-20-2 package.
• Independent gate-source voltage control for carrier (Pin 20) and peaking (Pin 1) stages.
• High ruggedness capability, supporting VSWR up to 10:1 through all phases and wideband noise conditions.
• Integrated Electrostatic Discharge (ESD) protection rated C1 (CDM) and 1B (HBM).

Specialized ICS Applications

• RF power amplification for multi-carrier and multi-standard small cell base stations.
• Support for GSM, W-CDMA, LTE, and NR technologies in the 2300 MHz to 2400 MHz band.

Specialized ICS Procurement Notes

Verify the specific packing description against project requirements. The component is available in Tape & Reel (TR) format with orderable quantities of 1000 or 3000 pieces per dry pack. Confirm RoHS compliance status via official manufacturer channels prior to procurement.

Specialized ICS Selection Notes

Design circuits to maintain case temperature within specified limits, as continuous operation at maximum temperature affects reliability. Ensure proper DC biasing where the peaking gate voltage is typically set 0.45 V lower than the carrier gate voltage. Verify that the application circuit provides adequate grounding for the exposed backside pad to ensure thermal dissipation and electrical stability.

Specialized ICS Part Context

This component belongs to the category of specialized ICs, specifically RF power MMICs. It is manufactured by Ampleon USA Inc. using Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. The device is intended for use in wireless communication infrastructure requiring high linearity and efficiency in the 2.3 GHz to 2.4 GHz spectrum.

Specialized ICS Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet. Designers should consult the manufacturer for potential obsolescence management or alternative product recommendations.

Specialized ICS FAQ

What is the maximum load mismatch the device can withstand?

The B10G2324N10DL can withstand a load mismatch corresponding to a Voltage Standing Wave Ratio (VSWR) of 10:1 through all phases under specified operating conditions.

How is the peaking stage biased relative to the carrier stage?

The datasheet specifies that the quiescent gate-source voltage for the peaking stage (VGSq(peaking)) is typically set 0.45 V lower than the carrier stage (VGSq(carrier)).

What is the thermal resistance from junction to case?

The thermal resistance (Rth(j-c)) is typically 10.2 K/W when measured at a case temperature of 90 °C with an average output power of 1.26 W.