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The B10S-G is a single-phase bridge rectifier manufactured by Comchip Technology. It features a peak repetitive reverse voltage of 1000 V and an average forward rectified current of 1.0 A. The device utilizes a surface-mount TB-4 package with solder pin termination. Key electrical parameters include a maximum forward voltage drop of 1.1 V at rated current, a non-repetitive peak surge current rating of 30 A, and a maximum reverse leakage current of 10 µA. The component operates within a temperature range from -55 °C to +150 °C junction temperature.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct voltage and current ratings. Confirm RoHS compliance status and packaging quantity requirements directly with authorized distributors prior to purchase. Ensure the procurement documentation matches the exact part number designation to avoid substitution errors in assembly.
Select this component when a compact surface-mount bridge rectifier is required for high-voltage applications up to 1000 V. Evaluate the thermal management requirements given the 1.0 A continuous current rating and the TB-4 package footprint. Compare the forward voltage drop characteristics against system efficiency targets and verify compatibility with automated pick-and-place mounting processes.
The B10S-G belongs to the TBxS series of silicon bridge rectifiers produced by Comchip Technology. This series offers various voltage ratings ranging from 200 V to 1000 V with current options typically including 0.8 A and 1.0 A variants. The family shares common mechanical dimensions and glass passivation technology, providing a standardized solution for surface-mount power rectification needs across different voltage classes.