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The B1S-G is a silicon Schottky barrier rectifier manufactured by Comchip Technology, designed for surface-mount applications. It features a DO-214AC (SMA) package with two terminals and a single diode configuration. The device supports an average forward current of 1.0 A and offers a maximum repetitive peak reverse voltage of 40 V. Key electrical parameters include a low maximum forward voltage of 0.55 V and a non-repetitive peak forward surge current capability of 30 A. It operates within a junction temperature range of -55 °C to +175 °C and meets RoHS compliance standards.
Verify the specific datasheet version from Comchip Technology to confirm exact thermal resistance values and mechanical dimensions. Ensure the ordering suffix matches the required lead-free and halogen-free specifications. Cross-reference terminal solderability requirements against MIL-STD-750 methods during component qualification.
Select this component when a 1.0 A surface-mount Schottky rectifier with a 40 V reverse voltage rating is required. Consider the DO-214AC package size for PCB layout constraints. Evaluate the 0.55 V forward voltage drop against system efficiency targets compared to standard PN junction alternatives.
This part belongs to Comchip Technology's SMA series of surface-mount Schottky barrier rectifiers. It shares the DO-214AC footprint with other variants in the family but differs in voltage and current ratings. The product line emphasizes low profile mounting and high reliability for automated assembly processes.
Potential substitutes include SS110-G or similar 1A 40V SMA Schottky diodes from other manufacturers. Verify pinout compatibility and ensure equivalent forward voltage and reverse leakage characteristics before substitution.