B2100AF-13

Overview

The B2100AF-13 is a single rectifier manufactured by Diodes Incorporated, utilizing Schottky Barrier Rectifier technology. It features a peak repetitive reverse voltage of 100 V and an average rectified output current of 2 A. The device exhibits a maximum forward voltage drop of 0.79 V at 25°C and a maximum reverse leakage current of 10 µA at 25°C. Encapsulated in the low-profile SMAF package, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

• Provides reduced low forward voltage drop for better efficiency and cooler operation.
• Features reduced high-temperature reverse leakage to increase reliability against thermal runaway failure.
• Constructed with molded plastic "Green" molding compound that is halogen and antimony free.

Applications

• Boost Diode
• Blocking Diode
• Recirculating Diode

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 10,000 units per reel. Confirm compliance requirements such as RoHS directives and lead-free finish specifications match project standards before finalizing procurement orders.

Selection Notes

Select this component for general rectification applications requiring low profile surface mount capabilities. Ensure the design accommodates the specified thermal resistance values and derating curves for ambient temperatures exceeding 25°C to maintain safe operating limits.

Part Context

This part belongs to the B2100AF series of Schottky barrier rectifiers designed for surface mount assembly. It utilizes the SMAF case style, which offers a compact footprint suitable for automated assembly processes while maintaining robust electrical performance characteristics under standard operating conditions.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-referencing requires matching SMAF packaging, 2A current rating, and 100V reverse voltage specifications to ensure functional compatibility within existing circuit designs.

FAQ

What is the non-repetitive peak forward surge current rating?

The device can withstand a non-repetitive peak forward surge current of 75 A for a duration of 8.3 ms on a single half sine-wave superimposed on rated load.

How does the reverse leakage current change at elevated temperatures?

At a junction temperature of +125°C with 100V applied, the maximum reverse leakage current increases to 2 mA, compared to 10 µA at +25°C.