BA157G B0G

Overview

The BA157G B0G is a fast recovery rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a single silicon element housed in a DO-41 axial leaded package. The device is rated for a maximum average forward rectified current of 1 A and a repetitive peak reverse voltage of 400 V. It operates within a junction temperature range of -55 °C to 150 °C. The component utilizes glass passivation for the chip junction and complies with RoHS directives, ensuring it is halogen-free.

Feature Summary

• Glass passivated chip junction for enhanced reliability
• High surge current capability
• Low power loss and high efficiency
• Halogen-free construction

Applications

• General purpose rectification in electronic circuits
• Inverter freewheeling applications
• DC/DC converter output rectification

Procurement Notes

Verify the specific suffix 'B0G' against official Taiwan Semiconductor documentation to confirm packing code and manufacturing details. Ensure the component meets required environmental standards such as RoHS compliance and halogen-free specifications before integration into designs.

Selection Notes

Select this component for applications requiring a 1 A current rating and 400 V reverse voltage blocking capability. The DO-41 package is suitable for through-hole mounting. Consider the fast recovery characteristics for switching applications where low reverse recovery time is necessary to minimize power loss.

Part Context

This part belongs to the BA157 series of fast recovery rectifiers from Taiwan Semiconductor. The series offers various voltage ratings while maintaining consistent current handling and package form factors. The BA157 variant specifically targets 400 V applications within this lineup.

Replacement Considerations

Compatible substitutes include FR157 or BA157 equivalents from other manufacturers that meet DO-41 package dimensions and electrical specifications. Verify pinout compatibility and thermal performance when cross-referencing.