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BA159G R1G
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Product Detailed Parameters
- Description：DIODE STANDARD 1000V 1A DO204AL
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1000 V
- Current - Average Rectified (Io)：1A
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 1 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：250 ns
- Current - Reverse Leakage @ Vr：5 µA @ 1000 V
- Capacitance @ Vr, F：15pF @ 4V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AL, DO-41, Axial
- Supplier Device Package：DO-204AL (DO-41)
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The BA159G R1G is a silicon rectifier diode manufactured by Taiwan Semiconductor Corporation. It features a maximum average forward rectified current of 1 A and a repetitive peak reverse voltage of 1000 V. The device exhibits a fast recovery time of 250 ns with a soft recovery characteristic, designated as 'F'. It is housed in a DO-41 (JEDEC DO-204AL) plastic axial leaded package. The component operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Fast recovery performance with soft recovery characteristics
- High reliability construction for robust operation
- Low power loss design efficiency
Applications
- General purpose rectification in electronic circuits
- Power supply input stages
- Freewheeling applications in inductive loads
Procurement Notes
Verify the specific suffix 'R1G' against official Taiwan Semiconductor documentation to confirm exact tape-and-reel specifications or marking codes. Ensure the ordered part matches the DO-41 package dimensions and electrical ratings defined in the datasheet. Confirm RoHS compliance status through the manufacturer's current product release notes before finalizing procurement orders.
Selection Notes
Select this component when a 1 A current rating and 1000 V blocking capability are required in an axial package. The 250 ns recovery time suits moderate-speed switching applications. Verify that the thermal management strategy supports the specified 150 °C maximum junction temperature limit under expected load conditions.
Part Context
This rectifier belongs to the standard discrete semiconductor diode category produced by Taiwan Semiconductor. It utilizes silicon technology for high-voltage blocking and is designed for general-purpose industrial and commercial electronics. The DO-41 package provides a cost-effective solution for through-hole mounting requirements in various power conversion topologies.
Replacement Considerations
Cross-reference with other 1A 1000V fast recovery diodes in DO-41 packages from manufacturers such as Vishay or ON Semiconductor. Ensure equivalent recovery time and reverse leakage current specifications are met. Verify pinout compatibility and thermal dissipation characteristics match the original design constraints.
