BA782-E3-18

BA782-E3-18

  • Description:RF DIODE PIN 35V SOD-123
  • Series:-

SKU:d13b6f060002 Category: Brand:

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Product Detailed Parameters

  • Description:RF DIODE PIN 35V SOD-123
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):35V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:1.25pF @ 3V, 1MHz
  • Resistance @ If, F:700mOhm @ 3mA, 1GHz
  • Power Dissipation (Max):-
  • Operating Temperature:125°C (TJ)
  • Package / Case:SOD-123
  • Supplier Device Package:SOD-123
  • Grade:-
  • Qualification:-

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BA782-E3-18

Overview

The BA782-E3-18 is a silicon epitaxial planar PIN diode manufactured by Vishay General Semiconductor - Diodes Division. It is designed for electric bandswitching in radio and TV tuners within the frequency range of 50 to 1000 MHz. The device features a constant and very small dynamic forward resistance over a wide range of frequency and forward current, alongside a reverse capacitance that remains largely independent of reverse voltage. It operates with a maximum reverse voltage of 35 V and a continuous forward current of 100 mA. The component is housed in an SOD-123 surface-mount package.

Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • RoHS-compliant commercial grade construction
  • Low dynamic forward resistance across broad frequency bands
  • Reverse capacitance stable against reverse voltage variations

Applications

  • Electric bandswitching in radio tuners
  • Bandswitching in television tuners
  • RF switching circuits operating between 50 MHz and 1000 MHz

Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration. The suffix '18' indicates tape and reel packaging on a 13-inch reel containing 10,000 units per box. Confirm RoHS compliance status and material categorization details directly from the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when low dynamic forward resistance and stable capacitance are required for RF bandswitching applications. Ensure the operating frequency falls within the specified 50 to 1000 MHz range. Verify that the thermal characteristics, including a junction temperature limit of 125 °C, align with the system's thermal management design constraints.

Part Context

This part belongs to the BA782/BA783 series of band switching diodes. The BA782 variant specifically exhibits lower dynamic forward resistance compared to the BA783 model at equivalent test conditions. Both models share identical mechanical dimensions and absolute maximum ratings but differ slightly in electrical performance metrics such as capacitance and resistance values.

Replacement Considerations

Direct substitutes include the BA783-E3-18, which shares the same package and general specifications but has different dynamic forward resistance and capacitance values. Other variants like BA782-HE3-18 offer AEC-Q101 qualification with halogen-free materials.

BA782-E3-18BA782-E3-18

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