BA783S-HE3-08

Overview

The BA783S-HE3-08 is a silicon epitaxial planar PIN diode manufactured by Vishay Semiconductors in an SOD-323 surface-mount package. Designed for electric bandswitching in radio and TV tuners, it operates within the 50 to 1000 MHz frequency range. The device features a maximum reverse voltage of 35 V and a continuous forward current rating of 100 mA. Key electrical parameters include a typical dynamic forward resistance of 1.2 Ω at 3 mA and 0.9 Ω at 10 mA across the operating frequency. Diode capacitance is specified as 1.2 pF at 3 V reverse bias and 1 MHz. It is AEC-Q101 qualified and RoHS compliant.

Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Low dynamic forward resistance maintained over wide frequency and current ranges
• Reverse capacitance remains small and largely independent of reverse voltage
• RoHS-compliant construction with halogen-free material categorization

Applications

• Electric bandswitching in radio tuners
• Bandswitching in television tuners
• RF switching circuits operating between 50 MHz and 1000 MHz

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the ordering suffix matches the specific packaging requirement, such as the 08 code indicating tape and reel quantities. Ensure compliance with regional environmental directives and check for any recent product change notices affecting availability or specifications.

Selection Notes

Select this component when low capacitance and stable dynamic resistance are required for RF switching applications. The SOD-323 package suits space-constrained designs. Verify that the 35 V reverse voltage and 100 mA forward current ratings exceed the circuit's peak operational demands. Consider thermal management requirements given the 125 °C junction temperature limit.

Part Context

This part belongs to the BA782S/BA783S series of band switching diodes. The BA783S variant is distinguished from the BA782S by its higher dynamic forward resistance values while maintaining similar voltage and current capabilities. Both devices share the same mechanical footprint and general application scope for RF tuning circuits.

Replacement Considerations

Direct functional substitutes within the same family include the BA782S-HE3-08, which offers lower dynamic resistance but shares identical packaging and qualification standards. Cross-referencing with other manufacturers' PIN diodes requires careful validation of capacitance and resistance curves against the original design specifications.