BAR6302LE6327XTMA1

RF Diode Overview

The BAR6302LE6327XTMA1 is a single PIN diode manufactured by Infineon Technologies, designed for radio frequency applications. It operates with a maximum repetitive reverse voltage of 50 V and supports a forward current of 100 mA. The device dissipates up to 250 mW of power and functions within a temperature range of -55°C to +150°C junction temperature. Packaged in the SOD-882 (PG-TSLP-2-1) surface-mount format, it exhibits a capacitance of 0.3 pF at 5 V and 1 MHz, with a series resistance of 1 Ohm at 10 mA and 100 MHz.

RF Diode Feature Summary

• Utilizes PIN diode technology optimized for RF signal processing and switching.

RF Diode Applications

• RF switching circuits
• Attenuator designs
• Phase shifter implementations

RF Diode Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for end-of-life notifications prior to integration into new production runs. Ensure storage conditions align with semiconductor handling standards to maintain performance integrity.

RF Diode Selection Notes

Select this component for high-frequency applications requiring low capacitance and precise resistance characteristics. Evaluate thermal management requirements given the 250 mW power dissipation limit. Compare against alternative packages if board space constraints differ from the SOD-882 footprint.

RF Diode Part Context

This part belongs to the BAR6302 series of RF PIN diodes from Infineon Technologies. It serves as a specialized discrete semiconductor for managing RF signals in communication systems. The specific suffix indicates tape-and-reel packaging suitable for automated surface-mount assembly processes.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit parameters before considering alternative manufacturers or pin-compatible devices.