BAR6402LRHE6327XTSA1

RF Diode Overview

The BAR6402LRHE6327XTSA1 is a silicon PIN diode from Infineon Technologies, designed as a high-voltage current-controlled RF resistor. It operates in the frequency range above 1 MHz up to 6 GHz and features very low capacitance at zero volt reverse bias (typ. 0.17 pF). The device has a maximum reverse voltage of 150 V and a forward current rating of 100 mA. It is housed in a leadless TSLP-2-7 package with three pins.

RF Diode Feature Summary

• High isolation performance for RF switching applications
• Very low signal distortion characteristics
• Low forward resistance for efficient attenuation control

RF Diode Applications

• RF attenuators
• RF switches
• Frequency range above 1 MHz up to 6 GHz

RF Diode Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official documentation. Ensure the ordering suffix matches the specific package and tape-and-reel configuration required for your assembly process. Confirm RoHS compliance status through the supplier's certificate of conformity before placing orders.

RF Diode Selection Notes

Select this component when designing circuits requiring precise RF attenuation or switching within the specified frequency band. Consider the thermal resistance and power dissipation limits relative to your operating temperature conditions. Evaluate the low capacitance value to ensure minimal signal interference in high-frequency paths.

RF Diode Part Context

This part belongs to the BAR64 series of silicon PIN diodes manufactured by Infineon Technologies. The series includes various configurations such as common cathode, common anode, and parallel pairs. The BAR6402 variant specifically utilizes a single diode structure optimized for high-voltage RF applications.

RF Diode Replacement Considerations

Direct replacements include other BAR64 series variants like BAR64-02V or BAR64-05 depending on package requirements. Verify pinout compatibility and electrical parameters such as breakdown voltage and capacitance before substituting.