BAR6402VH6327XTSA1

RF Diode Overview

The BAR6402VH6327XTSA1 is a surface mount RF PIN diode designed for low distortion switching applications up to 6 GHz. It features a nominal 50 μm I-region width and a typical carrier lifetime of 1550 ns, resulting in low forward resistance and minimal signal distortion. The device operates with a maximum reverse voltage of 150 V and a maximum forward current of 100 mA. Key electrical parameters include a typical capacitance of 0.13 pF at 0 V reverse bias (f ≥ 1 GHz) and a typical forward resistance of 2.1 Ω at 10 mA forward current (f = 100 MHz). It is housed in the industry-standard SC79 package.

RF Diode Feature Summary

• Optimized for low signal distortion in high-frequency RF switches
• Ultra-low capacitance characteristics suitable for frequencies up to 6 GHz
• Low forward resistance and low series inductance for efficient switching
• Cost-optimized design capable of holding off large RF voltages

RF Diode Applications

• Low bias current RF switches
• High-speed interface switches
• RF attenuators
• Wireless communication systems
• High speed data networks

RF Diode Procurement Notes

Verify component authenticity by checking the marking 'O' on the SC79 package against official Infineon documentation. Confirm the ordering code matches BAR6402VH6327XTSA1 exactly. Ensure handling precautions for ESD-sensitive devices are followed during storage and assembly to maintain device reliability and performance specifications.

RF Diode Selection Notes

Select this component when low signal distortion and high isolation are critical requirements for RF switching circuits operating up to 6 GHz. The specific carrier lifetime of 1550 ns and 50 μm I-region width provide a balance between low forward resistance and fast switching speeds. Consider the SC79 package dimensions if board space is constrained.

RF Diode Part Context

This part belongs to the BAR64 series of low signal distortion RF PIN diodes manufactured by Infineon Technologies. It is specifically engineered as a cost-optimized solution for applications requiring robust performance in holding off large RF voltages while maintaining low insertion loss and high isolation characteristics in compact surface-mount designs.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet or source material. Verify compatibility with existing circuit designs before considering alternative components from other manufacturers.